Semiconductor & Electronic Materials

single crystal silicon used in advanced applications requires ultra-high purity. However, trace impurities such as interstitial oxygen and substitutional carbon are inevitably introduced during crystal growth and raw material processing, significantly affecting material performance. Infrared (IR) spectroscopy provides a rapid, convenient, and accurate method for the qualitative and quantitative determination of oxygen and carbon in monocrystalline silicon. It enables effective control of impurity levels, supporting quality assurance in high-purity silicon production.